TCNT2000 www.vishay.com vishay semiconductors rev. 1.2, 17-aug-12 1 document number: 83796 for technical questions, contact: sensorstechsuppo rt@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 reflective optical sensor with transistor output description the TCNT2000 is a reflective sensor in a miniature smd package. it has a compact construction where the emitting light source and the detector are arranged in the same plane. the operating infrared wavelength is 940 nm. the detector consists of a silicon phototransistor. the sensor analog output signal (photo current) is triggered by detection of reflecte d infrared light from a close by object. the sensor has a built in daylight blocking filter, which greatly suppresses disturbing ambient light and therefore increases signal to noise ratio. features ? package type: smd ? detector type: phototransistor ? dimensions (l x w x h in mm): 3.4 x 2.7 x 1.5 ? operating range within > 20 % relative collector current: 0.2 mm to 5 mm ? emitter wavelength: 940 nm ? moisture sensitivit y level (msl): 3 ? material categorization: for definitions of compliance please see www.vishay.com/doc?99912 applications ? position sensor ? optical switch ? optical encoder (e.g. disc and tape drives for dvd and/or camera applications) ? object detection (e.g. paper presence in printer and copy machines) notes (1) ctr: current transfere ratio, i out /i in (2) conditions like in table basic charactristics/sensors note (1) moq: minimum order quantity 17091-2 a cath e coll top view product summary part number distance for maximum ctr rel (1) (mm) distance range for relative i out > 20 % (mm) typical output current under test (2) (ma) daylight blocking filter integrated TCNT2000 1 0.2 to 5 1.5 yes ordering information ordering code packaging volume (1) remarks TCNT2000 tape and reel moq: 1000 pcs drypack, msl 3 absolute maximum ratings (t amb = 25 c, unless otherwise specified) parameter test condition symbol value unit input (emitter) reverse voltage v r 5v forward current i f 100 ma forward surge current t p 100 s i fsm 500 ma output (detector) collector emitter breakdown voltage v (br)ceo 20 v emitter collector voltage v eco 7v collector current i c 20 ma sensor total power dissipation t amb 25 c p tot 170 mw ambient temperature range t amb - 40 to + 85 c storage temperature range t stg - 40 to + 100 c soldering temperature in accordance with fig. 11 t sd 260 c
TCNT2000 www.vishay.com vishay semiconductors rev. 1.2, 17-aug-12 2 document number: 83796 for technical questions, contact: sensorstechsuppo rt@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 absolute maximum ratings fig. 1 - power dissipation vs. ambient temperature fig. 2 - forward current vs. ambient temperature fig. 3 - test circuit 0 20 40 60 80 100 120 140 160 180 0 1020304050607080 100 t amb - ambient temperature (c) p v - power dissipation (mw) r thja = 285 k/w 90 0 20 40 60 80 100 120 0 1020304050607080 100 t amb - ambient temperature (c) i f - forward current (ma) r thja = 285 k/w 90 basic characteristics (t amb = 25 c, unless otherwise specified) parameter test condition symbol min. typ. max. unit input (emitter) forward voltage i f = 20 ma v f 1.25 1.45 v i f = 100 ma 1.4 1.7 temperature coefficient of v f i f = 20 ma tkv f - 1.0 mv/k peak wavelength i f = 100 ma p 940 nm reverse current v r = 5 v i r 10 a output (detector) collector emitter breakdown voltage i c = 0.1 ma, e = 0 v (br)ceo 20 v emitter collector voltage i e = 100 a, e = 0 v eco 7v collector emitter dark current v ce = 20 v, e = 0 i ceo 130na sensor collector current v ce = 5 v, i f = 20 ma, d = 1 mm i c 0.4 1.5 3.0 ma current transfer ratio i c /i f , d = 1 mm, v ce = 5 v ctr 4 % rise time i c = 0.8 ma, v ce = 5 v, r l = 100 t r 10 70 s fall time i c = 0.8 ma, v ce = 5 v, r l = 100 t f 15 70 s 15190 d = working distance 1 mm object: flat mirror
TCNT2000 www.vishay.com vishay semiconductors rev. 1.2, 17-aug-12 3 document number: 83796 for technical questions, contact: sensorstechsuppo rt@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 basic characteristics (t amb = 25 c, unless otherwise specified) fig. 4 - forward current vs. forward voltage fig. 5 - forward voltage vs. ambient temperature fig. 6 - collector dark current vs. ambient temperature fig. 7 - collector current vs. forward current fig. 8 - relative collector current vs. ambient temperature fig. 9 - relative coll ector current vs. distance 1 10 100 0 0.4 0.8 1.2 1.6 2.0 i f - forward current (ma) v f - forward voltage (v) t amb = 25 c 20 m s pul s e 1.0 1.1 1.2 1.3 1.4 1.5 - 60 - 40 - 20 0 20 40 60 80 100 120 140 v f - forward voltage (v) t amb - ambient temperature (c) i f = 50 ma i f = 20 ma i f = 10 ma 0.1 1 10 100 1000 10 000 0 20406080100 i ceo - collector dark current (na) t amb - ambient temperature (c) v ce = 20 v 10 30 50 70 90 0 1000 2000 4000 6000 8000 0 10203040 100 i c - collector current (a) i f - forward current (ma) t amb = 25 c v ce = 5 v d = 1 mm 50 60 70 80 90 3000 5000 7000 60 90 100 110 120 130 - 60 - 40 - 20 0 20 140 i c rel - relative collector current (%) t amb - ambient temperature (c) v ce = 5 v 40 60 80 100 120 80 70 i f = 10 ma i f = 20 ma i f = 50 ma 0 10 20 30 40 50 60 70 80 90 100 012345 8 i c rel - relative collector current (%) d - di s tance (mm) i f = 50 ma v ce = 5 v t amb = 25 c 7 6
TCNT2000 www.vishay.com vishay semiconductors rev. 1.2, 17-aug-12 4 document number: 83796 for technical questions, contact: sensorstechsuppo rt@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 10 - relative collec tor current vs. displacement precautions for use 1. over-current-proof customer must apply resistor s for protection, otherwise slight voltage shift will cause big current change (burn out will happen). 2. storage 2.1. storage temperature and rel. humidity conditions are: 5 c to 30 c, rh 60 2.2. floor life must not exceed 16 8 h, acc. to jedec level 3, j-std-020. once the package is opened, the products should be used within 168 h. otherwise, they should be kept in a damp proof box with desiccant. considering tape life, we suggest to use products within one year from production date. 2.3 if opened more than 168 h in an atmosphere 5 c to 30 c, rh 60 %, devices should be treated at 60 c 5 c for 15 h. 2.4 if humidity indicator in the package shows pink color (normal blue), then devices should be treated with the same conditions as 2.3. reflow solder profile fig. 11 - lead (pb)-free reflow solder profile acc. j-std-020 0 10 20 30 40 50 60 70 80 90 100 110 - 3- 2- 101234 i c rel - relative collector current (%) s - di s placement (mm) y - direction i f = 20 ma v ce = 5 v t amb = 25 c x - direction y - direction x - direction 0 50 100 150 200 250 300 0 50 100 150 200 250 300 time (s) temperature (c) 240 c 245 c max. 260 c max. 120 s max. 100 s 217 c max. 30 s max. ramp up 3 c/s max. ramp down 6 c/s 19841 255 c
TCNT2000 www.vishay.com vishay semiconductors rev. 1.2, 17-aug-12 5 document number: 83796 for technical questions, contact: sensorstechsuppo rt@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 package dimensions in millimeters tape and reel dimensions in millimeters: TCNT2000 1000 pcs/reel reel dimensions tape dimensions
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